Growth and characterization of high transmittance GZO films prepared by sol-gel method
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- 作者：Hailin Wanga ; Yihua Suna ; ; Liang Fanga ; b ; Lei Wangb ; Baocheng Changc ; Xiaohua Suna ; Linlong Yea
- 关键词：GZO ; Thin films ; Microstructure ; Optoelectronic properties ; Sol-gel method
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：30 September 2016
- 年：2016
- 卷：615
- 期：Complete
- 页码：19-24
- 全文大小：1068 K
文摘
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High transmittance Ga-doped ZnO (GZO) thin films deposited by sol-gel process.
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At 4 at.% Ga doping level, the highest transmittance of 98.49% with minimum resistivity of 1.12 × 10− 2 Ω·cm was obtained.
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The optical band gap of GZO films increase with an increase in Ga content.