Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells

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• 作者：N. Baladé ; s^a ; ^{nuria.balades@uca.es} ; M. Herrera^a ; David L. Sales^a ; F.J. Delgado^a ; D. Herná ; ndez-Maldonado^b ; Q.M. Ramasse^b ; J. Pizarro^c ; P. Galindo^c ; M. Gonzá ; lez^d ; ^e ; J. Abell^d ; S. Tomasulo^d ; J.R. Walters^d ; S.I. Molina^a
• 关键词：InAlAsSb ; High-efficiency ; Solar cells ; Multi-junction ; HAADF-STEM
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：395
• 期：Complete
• 页码：98-104
• 全文大小：2278 K
• 卷排序：395

文摘

The red shift in the photoluminescence emission of InAlAsSb layers is due to small and gradual compositional fluctuations, rather than in the form of atomically sharp transitions. The composition fluctuations in InAlAsSb active layers do not cause strong variations of the lattice parameter. The strain due to composition fluctuations in the InGaAs buffer layer does not have a strong effect in the InAlAsSb active layer. The 2D nature of the TEM-STEM techniques is an important limitation for the analysis of 3D small compositional fluctuations in quaternary semiconductors.