New Al0.25Ga0.75N/GaN high electron mobility transistor with partial etched AlGaN layer
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- 作者：Song Yuan ; yuansong1013@163.com" class="auth_mail" title="E-mail the corresponding author ; Baoxing Duan bxduan@163.com" class="auth_mail" title="E-mail the corresponding author ; Xiaoning Yuan ; Zhen Cao icaozhen@163.com" class="auth_mail" title="E-mail the corresponding author ; Haijun Guo guohj0822@163.com" class="auth_mail" title="E-mail the corresponding author ; Yintang Yang ytyang@xidian.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：HEMT ; Electric field modulation effect ; Power device
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：May 2016
- 年：2016
- 卷：93
- 期：Complete
- 页码：303-307
- 全文大小：679 K
文摘
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The two-dimensional electron gas (2DEG) density in HEMTs is changed by partially etching the AlGaN layer.
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With the same device dimensions, the breakdown voltage can be improved by 58% for the proposed Al0.25Ga0.75N/GaN HEMT compared with the conventional structure.
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The current collapse can be reduced resulting from the uniform surface electric field.