Low temperature iron gettering by grown-in defects in p-type Czochralski silicon

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• 作者：Haiyan Zhu ; Xuegong Yu ; ^{yuxuegong@zju.edu.cn} ; Xiaodong Zhu ; Yichao Wu ; Jian He ; Jan Vanhellemont¹ ; Deren Yang ; ^{mseyang@zju.edu.cn}
• 关键词：Czochralski silicon ; Iron gettering ; Grown-in defect
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：99
• 期：Complete
• 页码：192-196
• 全文大小：1018 K
• 卷排序：99

文摘

Low temperature (220–500 °C) Fe gettering in p-type as-grown Cz-Si is studied. The Fe gettering kinetics can be fitted well with a double exponential function. The two sinks for Fe are probably grown-in voids and oxide precipitate nuclei.