In thi
s paper, the photovoltaic feature of metal-boron carbide-
silicon (MCS)
solar cell wa
s reported. The boron-doped diamond-like carbon thin film on n-
silicon
sub
strate ha
s been prepared u
sing arc-di
scharge pla
sma chemical vapor depo
sition (PCVD) technique. The conductivity and the re
si
stivity of the film were mea
sured by Bio-Rad
Hall5500PC
sy
stem to be p-type
semiconductor and 3&nda
sh;12Ωcm/
![](/image<font)
s/glyph
s/BFN.GIF>, re
spectively. The boron content in the film
s wa
s about 0.8&nda
sh;1.2 % , obtained from Auger electron
spectro
scopy (AES), and
some microcry
stalline diamond grain
s (0.5&nda
sh;1.0μm) embedded in the mainly amorphou
s network were revealed through
scanning electron micro
scope (SEM) and Raman
spectrum. The performance of Au/C(B)/n-Si heterojunction
solar cell
s ha
s been given under dark
I&nda
sh;
V rectifying curve and
I&nda
sh;
V working curve (with 100mWcm<
sup>&minu
s;2
sup> illumination). A mea
surement of open-circuit voltage
V<sub>oc