Comparative study of SML electron beam resist characteristics with different developers

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• 作者：A. Aassime ; ^{abdelhanin.aassime@u-psud.fr} ; F. Bayle ; M.P. Plante ; F. Hamouda
• 关键词：ebeam lithography ; SML resist ; Liftoff ; Grating ; Resolution
• 刊名：Microelectronic Engineering
• 出版年：2017
• 出版时间：25 January 2017
• 年：2017
• 卷：168
• 期：Complete
• 页码：62-66
• 全文大小：935 K
• 卷排序：168

文摘

This work is aimed to compare three developers for SML-600 ebeam resist. Post-development rinse on the contrast curves was observed for SML-600. ZED-N50 developer was shown to be an excellent and high developer for SML resist. SML clearance was achieved with ZED-N50 but difficult with the other developers. Grating patterns were exposed with an aspect ratio of 11:1.