Single crystal growth of Eu₂CuSi₃ intermetallic compound by the floating-zone method

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• 作者：Chongde Cao^a ; ^{caocd@nwpu.edu.cn} ; Wolfgang Lö ; ser^b ; G&#xfc ; nter Behr^b ; R&#xfc ; diger Klingeler^c ; Norman Leps^b ; Hartmut Vinzelberg^b ; Bernd B&#xfc ; chner^b
• 关键词：A2. Single crystal growth ; A2. Floating-zone technique ; B1. Europium compounds ; B2. Magnetic materials
• 刊名：Journal of Crystal Growth
• 出版年：2011
• 出版时间：1 March 2011
• 年：2011
• 卷：318
• 期：1
• 页码：1009-1012
• 全文大小：473 K

文摘

Large single crystals of the Eu₂CuSi₃ intermetallic compound have been successfully grown by a vertical floating-zone method with optical heating. Differential thermal analysis reveals that Eu₂CuSi₃ melts congruently at 1422 °C. The single crystals grown at velocities of 3–5 mm/h show a preferred growth direction close to crystallographic [1 0 0] orientation with inclination angles of about 16–20°. The suppression of evaporation of volatile elements and the control of the floating-zone temperature play a main role in the stability of the growth process. The crystals are Cu-depleted with respect to the nominal Eu₂CuSi₃ stoichiometry. Both magnetic susceptibility and electrical resistivity measured on oriented single crystalline Eu₂CuSi₃ samples reveal significant anisotropy with an easy magnetic c-axis and ferromagnetic ordering at T_C=34 K.