Optical analysis of biaxial stress distribution in Al0.26Ga0.74N/GaN/Si HEMT's
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- 作者：Fikria Jablia ; jfikria@yahoo.fr" class="auth_mail" title="E-mail the corresponding author ; Mohamed Ali Zaidia ; b ; mmzaidi50@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Malek Gassoumia ; c ; Hana Mosbahia ; Manel Charfeddinea ; T. Alharbib ; Hassen Maarefa
- 关键词：Micro-Raman spectroscopy ; Micro-photoluminescence ; AlGaN/GaN/Si ; Stress ; Passivated by SiO2/SiN ; Compressive stress ; Tensile stress
- 刊名：Journal of Alloys and Compounds
- 出版年：2015
- 出版时间：25 November 2015
- 年：2015
- 卷：650
- 期：Complete
- 页码：533-536
- 全文大小：601 K
文摘
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AlGaN/GaN/Si HEMTs with x (Al) = 0.26% and SiO2/SiN surface passivation were prepared.
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SiO2/SiN passivation increases tensile residual stress probed in Al0.26Ga0.47N barrier.
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PL shows an agreement with RAMAN measurements.
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Tensile stress in the AlGaN barrier layers increases concentration of the 2DEG.