Phosphorus-doped bismuth telluride films by electrodeposition

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• 作者：Jian Zhou ; Qinghan Lin ; Hengyi Li ; Xuan Cheng
• 关键词：A. Chalcogenides ; C. Electrochemical techniques ; C. Electron microscopy ; D. Electrical conductivity ; D. Thermal conductivity
• 刊名：Materials Chemistry and Physics
• 出版年：2013
• 出版时间：15 August, 2013
• 年：2013
• 卷：141
• 期：1
• 页码：401-405
• 全文大小：1012 K

文摘

Phosphorus-doped Bi₂Te₃ films were synthesized on a stainless-steel electrode by electrochemical deposition. X-ray diffraction, scanning electron microscopy and transmission electron microscopy confirmed that the films are single-phased Bi₂Te₃ solid solutions with a rhombohedral structure. The as-prepared films exhibit n-type characteristics with the Hall coefficient??1.76E?2?m³?C^?1 and the electrical conductivity 280?S?cm^?1. The thermal conductivity is 0.47?W?m^?1?K^?1, which is as low as one-third of the value observed in the bulk material. The doped P atoms occupy the interstitial positions between the two adjacent Te(1) layers connected by Van der Waals interaction in Bi₂Te₃.