Si/SiC heterojunction prepared by metal induced crystallization of amorphous silicon

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• 作者：Yuan Zang^a ; Lian-bi Li^b ; ^{xpu_lilianbi@163.com} ; Jing An^a ; Lei Huang^a ; Hai Li Jin^c
• 关键词：Si/SiC heterostructure ; Metal induced crystallization ; Raman spectra ; TEM
• 刊名：Materials Letters
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：188
• 期：Complete
• 页码：409-412
• 全文大小：1535 K
• 卷排序：188

文摘

a-Si films were prepared by on 6H-SiC(0001) by PECVD. ɑ-Si films transforms to c-Si <111> and <110> after 600 °C induced annealing. TEM results indicate that the lattice constant of Si films is 5.43 Å. Ni promotes the crystallization of the ɑ-Si films on 6H-SiC at low temperature.