Copper telluride thin films grown by pulsed laser deposition

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• 作者：F. de Moure-Flores^a ; ^{fcomoure@hotmail.com} ; J.G. Quiñ ; ones-Galvá ; n^a ; A. Guillé ; n-Cervantes^a ; A. Herná ; ndez-Herná ; ndez^a ; M. de la L. Olvera^b ; J. Santoyo-Salazar^a ; G. Contreras-Puente^c ; M. Zapata-Torres^d ; M. Melé ; ndez-Lira^a
• 关键词：Copper telluride films ; Back electrode ; CdTe solar cells ; Pulsed laser deposition ; Morphology
• 刊名：Surface and Coatings Technology
• 出版年：2013
• 出版时间：25 February, 2013
• 年：2013
• 卷：217
• 期：Complete
• 页码：181-183
• 全文大小：577 K

文摘

Copper telluride thin films were deposited by pulsed laser deposition on Corning glass substrates using powders of Cu₂Te as target. Films were grown at substrate temperatures ranging from room temperature to 300 ¡ãC. The structural, compositional and electrical properties were analyzed as a function of the growth temperature. The X-ray diffraction shows that the crystalline structure of the films is strongly related to the growth temperature. The EDS analysis indicates that the stoichiometry of the Cu_xTe films depends on the growth temperature. For a substrate temperature of 300 ¡ãC a Cu₂Te film with hexagonal phase was obtained.