Hot carrier dynamics in HfN and ZrN measured by transient absorption spectroscopy
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- 作者：Hongze Xia ; Xiaoming Wen ; Yu Feng ; Robert Patterson ; r.j.patterson@unsw.edu.au" class="auth_mail" title="E-mail the corresponding author ; Simon Chung ; Neeti Gupta ; Santosh Shrestha ; Gavin Conibeer
- 关键词：Hot carrier dynamics ; Transient absorption ; Transition metal nitrides
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2016
- 出版时间：June 2016
- 年：2016
- 卷：150
- 期：Complete
- 页码：51-56
- 全文大小：976 K
文摘
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We did transient absorption (TA) measurements on two hot carrier absorber candidates HfN and ZrN.
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We extracted temperature information from the TA data using a dynamics theory developed in this work.
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The proposed theory uses the whole range of the TA data and outputs the instantaneous carrier occupation.
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A carrier temperature of 330 K was maintained for more than 2 ns in HfN.
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A cooler temperature and a shorter cooling time was observed in ZrN.