High quality amorphous IZO and HfO2 films were obtained by PLD technique. XPS measurements were used to obtain the valence band alignment in HfO2/IZO heterostructure. A valence band offset (ΔEV) of 1.75 eV was obtained for the HfO2/IZO heterostructure. A conduction band offset (ΔEC) of 0.65 eV was estimated for the HfO2/IZO heterostructure.