AES, LEED and PYS investigation of Au deposits on InSe/Si(1 1 1) substrate

详细信息    查看全文

• 作者：B. Abidri ; M. Ghaffour ; A. Abdellaoui ; M. Bouslama ; S. Hiadsi ; Y. Monteil
• 关键词：AES ; LEED ; PYS ; InSe ; Interface ; Au
• 刊名：Applied Surface Science
• 出版年：2010
• 出版时间：1 March 2010
• 年：2010
• 卷：256
• 期：10
• 页码：3007-3009
• 全文大小：186 K

文摘

Auger Electron Spectroscopy (AES), Low Energy Electron Diffraction (LEED) and Photoelectron Yield Spectroscopy (PYS) measurements have been used to monitor the interaction of gold (Au) deposits on InSe/Si(1 1 1) substrate. Au has been sequentially deposed under ultra-high vacuum onto 40 Å-thick film of layered semiconductor InSe which is epitaxially grown by molecular beam epitaxy (MBE) on a Si(1 1 1)1 × 1-H substrate and kept at room temperature. Au coverage varies from 0.5 monolayer to 20 monolayers (ML) (in terms of InSe atomic surface plane: 1 ML = 7.2 1014 at/cm²) which is corresponding to 1.30 Å of Au-metal. The Au/InSe/Si(1 1 1) system was characterized as function of Au deposit, we noticed an interaction at room temperature starts as an apparent intercalation process until 5 ML. Beyond this dose Au islands begin to form on the sample surface without interaction with InSe substrate, thus the interface is far from to be a simple junction Au–InSe.