Effects of nitrogen precursor on the Au-assisted vapor-liquid-solid growth of GaAs(N) nanostructures

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• 作者：Hidetoshi Suzuki ; Kentaro Sakai ; Tomohiro Haraguchi ; Toshihiro Yamauchi ; Masanobu Hijii ; Kouji Maeda ; Tetsuo Ikari
• 关键词：A1. Nanostructures ; A3. Metalorganic chemical vapor deposition ; A3. Vapor&ndash ; Liquid&ndash ; Solid growth ; B1. Dilute nitride
• 刊名：Journal of Crystal Growth
• 出版年：15 January, 2014
• 年：2014
• 卷：386
• 期：Complete
• 页码：100-106
• 全文大小：1592 K

文摘

We investigated the effects of the use of a N precursor on the morphology of GaAs(N) nanostructures grown on GaAs (0 0 1) substrates via the vapor-liquid-solid (VLS) method while using Au particles as the catalyst. The synthesized nanostructures were characterized using scanning electron microscopy and X-ray diffraction analyses. When the N precursor was not used, GaAs nanowires grew, mainly along the <1 1 1>A directions, on the surface of the substrate. These nanowires consisted of zincblende (ZB) and wurtzite (WZ) structures, with a number of boundaries being formed at the {1 1 1} planes. When the N precursor was used, isotropic GaAsN nanodots in which 1~2% of the As atoms had been substituted by N atoms were formed. These nanodots consisted of ZB structures having twin boundaries; no WZ structures were formed in this case. Finally, although they remained isotropic in shape, the nanodots grew in a direction along which the substrate was oriented.