Thermal instability effects in SiC Power MOSFETs

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• 作者：Alberto Castellazzi ; Tsuyoshi Funaki ; Tsunenobu Kimoto ; Takashi Hikihara
• 刊名：Microelectronics Reliability
• 出版年：2012
• 出版时间：September-October, 2012
• 年：2012
• 卷：52
• 期：9-10
• 页码：2414-2419
• 全文大小：1088 K

文摘

Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain-source bias voltages. For SiC MOSFETs no characterisation exists yet. This paper presents a thorough experimental investigation for devices of different voltage classes (600 and 1200 V) and different manufacturers, highlighting important differences in electro-thermal performance and failure mode as compared to Si devices. The goal is to derive information for design optimisation and reliable device development for a diverse range of target applications.