Energy dependence of non-Rutherford proton elastic scattering spectrum for hafnium nitride thin film
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- 作者：Yasuhito Gotoh ; Wataru Ohue ; Hiroshi Tsuji
- 关键词：Non-Rutherford elastic scattering ; Proton ; Energy dependence ; Hafnium nitride
- 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- 出版年：15 November, 2013
- 年：2013
- 卷：315
- 期：Complete
- 页码：68-71
- 全文大小：414 K
文摘
The energy dependence of the backscattering spectrum of non-Rutherford proton elastic scattering spectrum for a hafnium nitride (HfN) thin film was investigated. The purpose of the study is to demonstrate the feasibility of proton elastic scattering at 1.6 MeV as a tool for compositional analysis of transition metal nitride films on a silicon substrate. A HfN thin film deposited on a silicon substrate was analyzed by a common Rutherford backscattering spectrometry (RBS) with an 伪 beam at the energy of 1.98 MeV, and also by a proton elastic scattering at the energies between 1.53 MeV and 1.61 MeV. The results of two measurements were compared, and a good agreement for nitrogen composition was obtained when the proton energy was higher than 1.59 MeV. It was found that non-Rutherford proton elastic scattering can be used for the compositional analysis of HfN thin films with the thickness up to 230 nm. In analyzing a thicker film, careful observation is necessary.