Multi-bits memory cell using degenerated magnetic states in a synthetic antiferromagnetic reference layer
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- 作者：Akio Fukushima ; akio.fukushima@aist.go.jp" class="auth_mail" title="E-mail the corresponding author ; Kay Yakushiji ; Makoto Konoto ; Hitoshi Kubota ; Hiroshi Imamura ; Shinji Yuasa
- 关键词：Magnetic tunnel junction ; Magnetic random access memory ; Multi bits memory cell
- 刊名：Journal of Magnetism and Magnetic Materials
- 出版年：2016
- 出版时间：15 February 2016
- 年：2016
- 卷：400
- 期：Complete
- 页码：370-373
- 全文大小：502 K
文摘
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We developed a multi-bit magnetic memory cell using a perpendicularly magnetized magnetic tunnel junction having a synthetic antiferromagnetic reference layer.
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The multi-bit function is realized by combining the freedom of the magnetic free layer and that in the antiferromagnetically coupled reference layer.
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We demonstrated that the multi-bit memory cell can be used as a four-bit memory cell.
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A large resistance change in reading is important feature of the multi-bit memory cell.