High operational stability of solution-processed organic field-effect transistors with top-gate configuration
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- 作者：Kenichiro Takagi ; Takashi Nagase ; Takashi Kobayashi ; Hiroyoshi Naito ; naito@pe.osakafu-u.ac.jp" class="auth_mail" title="E-mail the corresponding author
- 关键词：Organic field-effect transistor ; Top-gate configuration ; High mobility ; Bias stress
- 刊名：Organic Electronics
- 出版年：2016
- 出版时间：May 2016
- 年：2016
- 卷：32
- 期：Complete
- 页码：65-69
- 全文大小：1099 K
文摘
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Operational stability of top-gate organic transistors is systematically investigated.
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Top-gate transistors exhibit higher stability than bottom-gate transistors.
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Stability is governed by trap density, while mobility is independent of trap density.