High performance top-gate field-effect transistors based on poly(3-alkylthiophenes) with different alkyl chain lengths

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• 作者：Kenichiro Takagi ; Takashi Nagase ; Takashi Kobayashi ; Hiroyoshi Naito
• 关键词：Organic field-effect transistors ; Poly(3-alkylthiophene) ; Top-gate configuration ; CYTOP ; Poly(4-chlorostyrene) ; Poly(methyl methacrylate)
• 刊名：Organic Electronics
• 出版年：February, 2014
• 年：2014
• 卷：15
• 期：2
• 页码：372-377
• 全文大小：1575 K

文摘

The device characteristics of top-gate field-effect transistors (FETs) based on typical polymer semiconductor regioregular poly(3-alkylthiophenes) (P3ATs) with different alkyl chain lengths are investigated. High field-effect mobilities of 鈭?0^鈭? cm²/Vs are obtained irrespective of alkyl chain length even when polymer gate insulators with different dielectric constants (2.1-3.9) are used. This is attributed to the spontaneous formation of highly ordered edge-on lamellar structures at the surface of P3AT thin films that are the channel regions in top-gate FETs. In addition, top-gate P3AT FETs containing different gate insulators exhibit high operational stability, with low threshold voltage shifts of <0.5 V following prolonged gate bias stress, which is comparable to that of hydrogenated amorphous silicon thin film transistors.