Rapid passivation of carrier-induced defects in p-type multi-crystalline silicon
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- 作者：David N.R. Payne ; d.n.payne@unsw.edu.au" class="auth_mail" title="E-mail the corresponding author ; Catherine E. Chan ; Brett J. Hallam ; Bram Hoex ; Malcolm D. Abbott ; Stuart R. Wenham ; Darren M. Bagnall
- 关键词：LID ; CID ; LeTID ; Multi-crystalline silicon ; PERC ; Degradation ; Regeneration
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2016
- 出版时间：December 2016
- 年：2016
- 卷：158
- 期：part_P1
- 页码：102-106
- 全文大小：319 K
文摘
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Slow forming LID present in mc-Si cells is confirmed to also be activated by current.
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Effect found to varying extents in mc-Si PERC cells from different manufacturers.
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Treatments using high irradiance and elevated temperature processes are investigated.
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Degradation reduced by up to 80 percent using a rapid 10 s treatment.
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Extending treatment time further suppressed degradation.