Black silicon laser-doped selective emitter solar cell with 18.1% efficiency
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- 作者：Rasmus Schmidt Davidsena ; rasda@nanotech.dtu.dk" class="auth_mail" title="E-mail the corresponding author ; Hongzhao Lic ; Alexander Toc ; Xi Wangc ; Alex Hanc ; Jack Anc ; Jack Colwellc ; Catherine Chanc ; Alison Wenhamc ; Michael Stenbæ ; k Schmidta ; Anja Boisena ; Ole Hansena ; b ; Stuart Wenhamc ; Allen Barnettc
- 关键词：Black silicon ; Reactive ion etching ; Laser doping ; LDSE ; Plating
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：144
- 期：Complete
- 页码：740-747
- 全文大小：2428 K
文摘
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Maskless RIE texturing is combined with a laser doped selective emitter.
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An efficiency of 18.1% and a fill factor of 80.1% is achieved for the best cell.
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The high fill factor is due to near optimum laser power and scan speed for black Si.
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The result is encouraging since passivation and emitter doping was not optimized.