Influence of AlN thickness on AlGaN epilayer grown by MOCVD
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- 作者：M. Jayasakthia ; b ; S. Juillagueta ; Sandrine.juillaguet@umontpellier.fr" class="auth_mail" title="E-mail the corresponding author ; H. Peyrea ; L. Konczewicza ; K. Baskarb ; c ; S. Contrerasa
- 关键词：AlGaN ; MOCVD ; HRXRD ; PL ; AFM
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：98
- 期：Complete
- 页码：515-521
- 全文大小：809 K
文摘
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AlGaN epilayers with various AlN thickness epilayers were grown using MOCVD.
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In AlGaN samples, the crystalline quality, strain and dislocation density were calculated and discussed.
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“S-shape” behavior is observed in temperature dependent PL.
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The standard deviation of the potential fluctuations in AlGaN samples were extracted and discussed.