Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks

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• 作者：Miao Xu^a ; ^b ; Huilong Zhu^a ; ^{zhuhuilong@ime.ac.cn} ; Yanbo Zhang^a ; ^{zhangyanbo@ime.ac.cn} ; Qiuxia Xu^a ; Yongkui Zhang^a ; Changliang Qin^a ; ^b ; Qingzhu Zhang^a ; ^b ; Huaxiang Yin^a ; ^b ; Hao Xu^a ; ^b ; Shuai Chen^a ; Jun Luo^a ; ^b ; Chunlong Li^a ; Chao Zhao^a ; ^b ; Tianchun Ye^a ; ^b
• 关键词：FinFET ; Halo ; Work function ; Punch through stop pocket ; Threshold voltage ; High k metal gate
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：52-60
• 全文大小：3593 K
• 卷排序：129

文摘

Form halo & PTSP doping profile in fin using an implantation after dummy gate removal. The halo & PTSP dose is adaptive to gate length, enabling VTH variation reduction. The implantation for halo & PTSP does not degrade FinFET performance, SS, and DIBL. Shift VTH by −0.43 V/+0.11 V for N/P-FinFETs by implanting P+/BF2+ into metal gate. Improve N/P-FinFET PBTI/NBTI respectively with P+/BF2+ implanted metal gate.