Effect of Ni³⁺ concentration on the resistive switching behaviors of NiO memory devices

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• 作者：Guokun Ma ; Xiaoli Tang ; Zhiyong Zhong ; Huaiwu Zhang ; Hua Su ; ^{uestcsh@163.com}
• 关键词：NiO ; Resistive switching ; RRAM ; Ni3+ concentration
• 刊名：Microelectronic Engineering
• 出版年：2013
• 出版时间：August, 2013
• 年：2013
• 卷：108
• 期：Complete
• 页码：8-10
• 全文大小：420 K

文摘

Resistive switching characteristics of NiO resistive switching random access memory (RRAM) are investigated which are affected by Ni³⁺ concentration. In order to obtain different concentration of Ni³⁺, we annealed the RRAM devices with a series of temperatures. We measured the Ni³⁺ concentrations and the typical I-V curves of the samples. It was found the resistive switching properties became worse when the annealing temperature was over 650 ¡ãC. Furthermore, we got an optimum performance at 550 ¡ãC, which indicated that the appropriate concentration of Ni³⁺ enhanced the resistive switching behaviors.