Surface reconstruction formed by different surface treatments controls the heteroepitaxial growth.

Mismatched stress can be effectively released when the mismatched material epi-film tilts out of the epitaxial interface plane to create a coincidence-site lattice.

GaSb films grown on Si(1 1 1)-(5√3 × 5√3)-Sb surface show better crystal quality and morphology for its self-assembled 2D fishbone structure.