Synthesis of SiC nanowires by thermal evaporation method without catalyst assistant

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• 作者：Kai Chen ; Zhaohui Huang ; ^{huang118@cugb.edu.cn} ; Juntong Huang ; Minghao Fang ; Yan-gai Liu ; Haipeng Ji ; Li Yin
• 关键词：D. SiC ; Nanowires ; Vapor&ndash ; solid process ; SiC&ndash ; SiO2 core&ndash ; shell structure
• 刊名：Ceramics International
• 出版年：2013
• 出版时间：March, 2013
• 年：2013
• 卷：39
• 期：2
• 页码：1957-1962
• 全文大小：1392 K

文摘

In this paper, SiC nanowires were successfully synthesized on Si substrate by the thermal evaporation method without the assistance of a metal catalyst. The phase composition, morphology and microstructure of the SiC-SiO₂ core-shell nanowires were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), and high-resolution transmission electron microscopy (HRTEM). The SiC nanowires produced grew along the [111] direction and had diameters of 50-100 nm with lengths of several hundreds of microns. The SiC nanowire was composed of a single-crystalline SiC core with a thin amorphous SiO₂ shell. The growth mechanism of the nanowires can be explained by the vapor-solid (VS) process.