文摘
In this paper, SiC nanowires were successfully synthesized on Si substrate by the thermal evaporation method without the assistance of a metal catalyst. The phase composition, morphology and microstructure of the SiC-SiO2 core-shell nanowires were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), and high-resolution transmission electron microscopy (HRTEM). The SiC nanowires produced grew along the [111] direction and had diameters of 50-100 nm with lengths of several hundreds of microns. The SiC nanowire was composed of a single-crystalline SiC core with a thin amorphous SiO2 shell. The growth mechanism of the nanowires can be explained by the vapor-solid (VS) process.