In situ TEM annealing of ion-amorphized Hi Nicalon S and Tyranno SA3 SiC fibers

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• 作者：J. Huguet-Garcia^a ; ^{juan.huguet-garcia@cea.fr" class="auth_mail" title="E-mail the corresponding author} ; A. Jankowiak^a ; S. Miro^b ; E. Meslin^c ; Y. Serruys^b ; J.-M. Costantini^a
• 关键词：SiC fibers ; Ion-amorphization ; Recrystallization ; In situ TEM ; Thermal annealing
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2016
• 出版时间：1 May 2016
• 年：2016
• 卷：374
• 期：Complete
• 页码：76-81
• 全文大小：1667 K

文摘

In this work, recrystallization of ion-amorphized Hi Nicalon Type S and Tyranno SA3 SiC fibers (4 MeV Au³⁺, 2 × 10¹⁵ cm⁻²) has been studied via in situ TEM annealing. Both fibers show a two-step recovery process of the radiation damage. First recovery stage starts at temperatures as low as 250 °C and implies recovery of the radiation swelling. Eventually the amorphous layer recrystallizes with no signs of polytype change (3C-SiC). Recrystallization temperatures yield 900–920 °C and 930 °C for the HNS and the TSA3 respectively. HNS fiber shows columnar recrystallization perpendicular to the amorphous–crystalline interphase with a grain growth rate of ∼20 nm min⁻¹. On the other hand, recrystallization of TSA3 fiber is rather “spontaneous” with no preferential growth direction. The different recrystallization is attributed to the different microstructure of the fibers.