Effect of precursor solution and annealing temperature on the physical properties of Sol-Gel-deposited ZnO thin films
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- 作者：J.G. Qui帽ones-Galv谩n ; I.M. S ; oval-Jim茅nez ; H. Tototzintle-Huitle ; L.A. Hern谩ndez-Hern谩ndez ; F. de Moure-Flores ; A. Hern谩ndez-Hern谩ndez ; E. Campos-Gonz谩lez ; A. Guill茅n-Cervantes ; O. Zelaya-Angel ; J.J. Araiza-Ibarra
- 关键词：ZnO ; Sol&ndash ; gel ; Optoelectronic
- 刊名：Results in Physics
- 出版年：2013
- 年：2013
- 卷：3
- 期：Complete
- 页码：248-253
- 全文大小：935 K
文摘
Polycrystalline transparent Zinc oxide thin films have been grown on glass substrates by the sol-gel technique using two different precursor solutions. The physical properties of the films were analyzed with X-ray diffraction, Atomic Force Microscopy, UV-Vis and Raman spectroscopy. The results show that the films grew in the hexagonal wurtzite structure. The band gap of the samples was estimated from UV-Vis measurements in values from 3.1 to 3.22 eV, these values are in agreement with those reported in the literature. Two different simple ways to obtain polycrystalline ZnO were developed and the properties of the films were studied as a function of the precursor solution.