Observation of regular defects formed on the surface of PbTe thin films grown by molecular beam epitaxy

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• 作者：Bingpo Zhang ; Chunfeng Cai ; Lian Hu ; Xiaodong Wei ; Huizhen Wu
• 关键词：Lead telluride thin films ; Regular shape defects ; Scanning electron microscope
• 刊名：Applied Surface Science
• 出版年：2011
• 出版时间：1 January 2011
• 年：2011
• 卷：257
• 期：6
• 页码：1986-1989
• 全文大小：440 K

文摘

Regular shape defects on the surface of PbTe thin films grown by molecular beam epitaxy (MBE) were studied by scanning electron microscope (SEM). Two types of regular shape defects were observed on Te-rich PbTe films grown at substrate temperature T ≥ 235 °C with a beam flux ratio of Te to PbTe (R_f) to be 0.5 and at 280 °C with a R_f ≥ 0.4, which include cuboids and triangular pyramids. The formation mechanism of the observed regular shape defects is interpreted as following: They are the outcome of fast growth rate along {1 0 0} crystal planes that have the lowest surface energy and the enclosure of the {1 0 0} crystal planes. The formation of the regular shape defects in the growth of PbTe needs appropriate substrate temperature and Te-rich ambience. However, when R_f is decreased low enough to make the films slightly Pb-rich, triangular pits that originate from the insufficient glide of the threading dislocations along the main 1 1 0 {1 0 0} glide system of PbTe in Cottrell atmosphere, will be the main feature on the film surface.