Tunable electrical properties of NiO thin films and p-type thin-film transistors
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- 作者：Yongyue Chen ; Yajie Sun ; Xusheng Dai ; Bingpo Zhang ; Zhenyu Ye ; Miao Wang ; Huizhen Wu ; hzwu@zju.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Sputtering ; Electrical properties ; Thin film transistor ; NiO
- 刊名：Thin Solid Films
- 出版年：2015
- 出版时间：1 October 2015
- 年：2015
- 卷：592
- 期：part_PA
- 页码：195-199
- 全文大小：966 K
文摘
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Electrical properties of sputtered NiO films were tuned.
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Achievement of high mobility of 1.07 cm2/Vs and hole concentration of 2.78 × 1017 cm− 3.
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Application of RF sputtered NiO films as active layer in thin film transistors.