Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

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• 作者：Byung Kook Lee ; Eunae Jung ; Seok Hwan Kim ; Dae Chul Moon ; Sun Sook Lee ; Bo Keun Park ; Jin Ha Hwang ; Taek-Mo Chung ; Chang Gyoun Kim ; Ki-Seok An
• 刊名：Materials Research Bulletin
• 出版年：2012
• 出版时间：October, 2012
• 年：2012
• 卷：47
• 期：10
• 页码：3052-3055
• 全文大小：816 K

文摘

Thin film transistors (TFTs) with tin oxide films as the channel layer were fabricated by means of plasma enhanced atomic layer deposition (PE-ALD). The as-deposited tin oxide films show n-type conductivity and a nano-crystalline structure of SnO₂. Notwithstanding the relatively low deposition temperatures of 70, 100, and 130 ¡ãC, the bottom gate tin oxide TFTs show an on/off drain current ratio of 10⁶ while the device mobility values were increased from 2.31 cm²/V s to 6.24 cm²/V s upon increasing the deposition temperature of the tin oxide films.