Numerical investigation of an experimental Kyropoulos process to grow silicon ingots for photovoltaic application

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• 作者：Ah. Nouri^a ; ^b ; ; Y. Delannoy^a ; G. Chichignoud^a ; ^c ; L. Lhomond^a ; B. Helifa^b ; IK. Lefkeir^b ; K. Zaidat^a
• 关键词：A1. Numerical simulation ; A1. Radiation ; A2. Hydrothermal crystal growth ; A2. Kyropoulos ; B1. Silicon ; B2. Photovoltaic
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：460
• 期：Complete
• 页码：48-58
• 全文大小：1637 K
• 卷排序：460

文摘

Full 3D numerical model with no symmetry was required to simulate Kyropoulos process. Asymmetric growth occurred due to higher crystal radiation and convection decrease. The top heater was kept high to attenuate radiative cooling of the crystal. Added crystal rotation homogenized the melt flow. Symmetric growth was obtained numerically and experimentally using these conditions.