Compositional analysis of In-rich InGaN layers grown on GaN templates by metalorganic chemical vapor deposition

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• 作者：Hee Jin Kim ; Yoori Shin ; Soon-Yong Kwon ; Hyun Jin Kim ; Suk Choi ; Sukwon Hong ; Chang Soo Kim ; Jung-Won Yoon ; Hyeonsik Cheong ; Euijoon Yoon
• 关键词：A1. X-ray diffraction ; A3. Metalorganic chemical vapor deposition ; B1. Nitrides ; B2. Semiconducting ternary compounds
• 刊名：Journal of Crystal Growth
• 出版年：2008
• 出版时间：1 June 2008
• 年：2008
• 卷：310
• 期：12
• 页码：3004-3008
• 全文大小：820 K

文摘

In-rich InGaN layers were successfully grown on GaN templates by metalorganic chemical vapor deposition. In incorporation in InGaN layer was enhanced by decreasing the growth temperature, and In-rich InGaN layer with In content higher than 70 % was obtained below 670 °C. Especially, double peaks from In-rich InGaN grown at 640 °C appeared in X-ray diffraction pattern and photoluminescence (PL). The further investigation of strain status of InGaN layers by reciprocal space mapping (RSM) clarified that In-rich InGaN layers were fully relaxed and consisted of InGaN alloys of two different In contents of 82 % and 97 % , respectively. As a result, we confirmed that compositional inhomogeneity which is mainly reported in Ga-rich InGaN layer could exist in In-rich InGaN layer higher than 80 % . We also investigated In incorporation behavior in InGaN at low temperature (640 °C). In content in InGaN layer was found to be controlled by just changing input gas phase mole fraction (TMIn/(TMGa+TMIn)) at low growth temperature and a linear relationship was observed between In content in InGaN layers and gas phase mole fraction.