Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

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• 作者：Geunho Yoo^a ; Hyunsung Park^a ; Donghun Lee^a ; Hyoungjin Lim^a ; Seunga Lee^a ; Bohyun Kong^b ; Hyungkoun Cho^b ; Hyoungwon Park^c ; Heon Lee^c ; Okhyun Nam^a ; ^{ohnam@kpu.ac.kr}
• 关键词：Non-polar GaN ; PSS ; Defect reduction ; InGaN
• 刊名：Current Applied Physics
• 出版年：2011
• 出版时间：July, 2011
• 年：2011
• 卷：11
• 期：4_supp_S
• 页码：S90-S94
• 全文大小：1K

文摘

Non-polar a-plane GaN layers were grown on planar and hemispherical micro- and nano-patterned r-sapphire substrates (PSS) by metal organic chemical vapor deposition (MOCVD). Double Crystal X-ray Rocking Curve (DCXRC) and Transmission Electron Microscopy (TEM) analyses showed that the crystal quality of a-GaN grown on the micro-PSS was the best among three kinds of r-sapphire substrates, which was attributed to defect reduction through lateral overgrowth on the hemispherical patterns. The intensity of the near band-edge emission (NBE) at 3.4eV from a-GaN on the micro-PSS was increased by about 30 times compared with that of the conventional a-plane GaN on planar r-sapphire, while the yellow emission spectrum at 2.2eV was the lowest among the three samples. Comparison of the micro-photoluminescence mapping image and the cross-section TEM also showed high and low defect regions on the planar section and hemisphere, respectively.