Dynamic study on microstructural evolution of nickel germanide utilizing zirconium interlayer

详细信息    查看全文

• 作者：Jae-Wook Lee ; Jee-Hwan Bae ; Ji-Hye Hwang ; Hyung-Kyu Kim ; Min-Ho Park ; Hyoungsub Kim ; Cheol-Woong Yang ; ^{cwyang@skku.edu}
• 关键词：Ni germanide ; Thermal stability ; In situ TEM ; Zr interlayer ; Agglomeration
• 刊名：Microelectronic Engineering
• 出版年：2012
• 出版时间：January, 2012
• 年：2012
• 卷：89
• 期：Complete
• 页码：23-26
• 全文大小：664 K

文摘

We examined the formation and morphological evolution of germanide formed in a ternary Ni/Zr-interlayer/Ge system using ex situ and in situ annealing experiments. Ni germanide in the Ni/Zr-interlayer/Ge system remained stable at temperatures up to 550 ¡ãC whereas Ni germanide in a Ni/Ge system agglomerated and was unstable. Microstructural and chemical analyses of the Ni/Zr-interlayer/Ge system during and after in situ annealing in a transmission electron microscope confirmed that the Zr atoms were retained uniformly on the top region of the Ni germanide layer during the diffusion reaction. Ultimately, the level of agglomeration in the Ni germanide film was reduced by the Zr-interlayer, and the thermal stability of Ni germanide was improved.