We performed the instability investigation on InGaAs quantum-well InGaAs MOSFETs.
The InGaAs MOSFET with Al2O3/HfO2 exhibits better electrostatic integrity, however, it shows worse reliability and frequency dispersion behavior than one with Al2O3.
At cryogenic temperature, the device with Al2O3/HfO2 induces worse hysteresis behavior than one with Al2O3.