Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
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- 作者：Jeong-Gyu Song ; Jusang Park ; Jaehong Yoon ; Hwangje Woo ; Kyungyong Ko ; Taeyoon Lee ; Sung-Hwan Hwang ; Jae-Min Myoung ; Keewon Kim ; Youngman Jang ; Kwangseok Kim ; Hyungjun Kim
- 关键词：Magnesium oxide ; Atomic layer deposition ; ZnO nanowires ; Photoluminescence ; Passivation
- 刊名：Journal of Luminescence
- 出版年：January, 2014
- 年：2014
- 卷：145
- 期：Complete
- 页码：307-311
- 全文大小：1143 K
文摘
The growth characteristics and film properties of magnesium oxide (MgO) thin films fabricated by plasma enhanced atomic layer deposition (PE-ALD) and thermal ALD (Th-ALD) were comparatively investigated for passivation layer applications. For both processes, well-saturated growth characteristics were observed, with a higher saturated growth rate for Th-ALD. X-ray photoemission analysis showed that very high purity MgO film with virtually no carbon contamination was deposited by PE-ALD. X-ray diffraction and transmission electron microscopy analysis showed that the PE-ALD MgO thin films had a larger grain size than the Th-ALD MgO thin films and were predominantly (1 1 1) crystal orientation. The photoluminescence analysis showed enhanced luminescence properties of the ALD MgO shell/ZnO nanowires. In particular, PE-ALD MgO showed greater enhancement of the luminescence properties than Th-ALD MgO.