We investigate the Si(111) surface prepared in CVD ambient at 1000 °C in 950 mbar H2.
UHV-based XPS, LEED, STM and FTIR as well as ambient AFM are applied.
After processing the Si(111) surface is free of contamination and atomically flat.
The surface exhibits a (1 × 1) reconstruction and monohydride termination.
Wet-chemical pretreatment and homoepitaxy are required for a regular step structure.