Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy
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- 作者：W. Zhaoa ; M. Steidla ; A. Paszuka ; S. Brü ; cknera ; b ; A. Dobricha ; O. Suppliea ; b ; P. Kleinschmidta ; T. Hannappela ; b ; thomas.hannappel@tu-ilmenau.de" class="auth_mail" title="E-mail the corresponding author
- 关键词：(MO)CVD ; MOVPE ; Thermal deoxidation ; Si(111) ; Hydrogen ; III-V-on-Si heteroepitaxy
- 刊名：Applied Surface Science
- 出版年：2017
- 出版时间：15 January 2017
- 年：2017
- 卷：392
- 期：Complete
- 页码：1043-1048
- 全文大小：1418 K
文摘
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We investigate the Si(111) surface prepared in CVD ambient at 1000 °C in 950 mbar H2.
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UHV-based XPS, LEED, STM and FTIR as well as ambient AFM are applied.
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After processing the Si(111) surface is free of contamination and atomically flat.
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The surface exhibits a (1 × 1) reconstruction and monohydride termination.
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Wet-chemical pretreatment and homoepitaxy are required for a regular step structure.