Construction of semiconductor nanocomposite on porous silicon using chemical method

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• 作者：Haidar Abdul Razaq Abdul Hassan ; Marwa Abdul Muhsien Hassan ; ^{marwa_alganaby@yahoo.com" class="auth_mail" title="E-mail the corresponding author} ; Ibrahim R. Agool
• 关键词：Porous silicon ; Electrochemical etching ; ZnO ; TiO2 ; FE-SEM
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：127
• 期：23
• 页码：11411-11417
• 全文大小：2966 K

文摘

Porous silicon (PSi) samples fabricated by electrochemical etching method at current density (40) mA/cm² with different etching time (3, 3:30, 4, 4:30) min where ZnO, TiO₂ and 70% ZnO:30% TiO₂ deposited by chemical spray pyrolysis to be applied for gas sensors, these sample have been investigated scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. XRD measurement has confirmed the crystallinity with Nanopores were produced on the PSi layer. The (FE-SEM) photographs revealed the highly porous structure which proved ideal for the performance as gas sensing element. AFM confirms the nanometric size.