Structural and optical investigations of Al_xGa_1−xAs:Si/GaAs(1 0 0) MOCVD heterostructures

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• 作者：P.V. Seredin ; A.V. Glotov ; E.P. Domashevskaya ; I.N. Arsentyev ; D.A. Vinokurov ; I.S. Tarasov
• 关键词：AlGaAs ; Si doping ; XRD ; FIR ; DX-centers
• 刊名：Physica B
• 出版年：2010
• 出版时间：15 November 2010
• 年：2010
• 卷：405
• 期：22
• 页码：4607-4614
• 全文大小：953 K

文摘

Al_xGa_1−xAs:Si/GaAs(1 0 0) heterostructure and homoepitaxial GaAs:Si/GaAs(1 0 0) structures grown by MOCVD were investigated. The changes observed in our experiments with highly doped Al_xGa_1−xAs alloys, led not only to the reconstruction of the electron density and formation of deep levels (DX-centers) with subsequent relaxation of the crystal lattice in the alloy, but also indicate at the formation of quaternary Al_xGa_1−x−ySi_y+zAs_1−z substitution-type alloy grown on GaAs(1 0 0).