Design of GaN/AlGaN quantum wells for maximal intersubband absorption in 1.3<λ<2 μm wavelength range

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• 作者：Jovanovic ; V. ; Indjin ; D. ; Ikonic ; Z. ; Milanovic ; V. ; Radovanovic ; J.
• 关键词：73.20.Dx ; A. Quantum wells ; A. Semiconductors ; D. Electron interaction
• 刊名：Solid State Communications
• 出版年：2002
• 出版时间：March 14, 2002
• 年：2002
• 卷：121
• 期：11
• 页码：619-624
• 全文大小：123 K

文摘

The design of rectangular GaN/AlGaN quantum wells for maximal intersubband absorption in the near infrared wavelength range 1.3–2μm, on the 0→1 electronic transition is considered, taking into account the effects of internal polarization fields and nonparabolicity. The nonlinear optimization method based on solving a system of nonlinear equations is employed in finding the structural parameters which give the maximal dipole matrix element while keeping the absorption peak at the desired wavelength.