n-Si/SiGe quantum cascade structures for THz emission

详细信息    查看全文

• 作者：Z. Ikonic ; I. Lazic ; V. Milanovic ; R.W. Kelsall ; D. Indjin and P. Harrison
• 刊名：Journal of Luminescence
• 出版年：2006
• 出版时间：December 2006
• 年：2006
• 卷：121
• 期：2
• 页码：311-314
• 全文大小：194 K

文摘

In this work we report on modeling the electron transport in n-Si/SiGe structures. The electronic structure is calculated within the effective-mass complex-energy framework, separately for perpendicular (X_z) and in-plane (X_xy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization. The transport is described via scattering between quantized states, using the rate equations approach and tight-binding expansion, taking the coupling with two nearest-neighbour periods. The acoustic phonon, optical phonon, alloy and interface roughness scattering are taken in the model. The calculated U/I dependence and gain profiles are presented for a couple of QC structures.