Electroluminescence from Si/SiGe quantum cascade emitters

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• 作者：Paul ; D.J. ; Lynch ; S.A. ; Bates ; R. ; Ikonic ; Z. ; Kelsall ; R.W. ; Harrison ; P. ; Norris ; D.J. ; Liew ; S.L. ; et. al.
• 关键词：78.30 ; 78.50.Ge ; 78.60.Fi ; 42.72.A ; Si/SiGe ; Intersubband electroluminescence ; Quantum cascade emitters
• 刊名：Physica E
• 出版年：2003
• 出版时间：March, 2003
• 年：2003
• 卷：16
• 期：3-4
• 页码：309-314
• 全文大小：305 K

文摘

Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at 3.2THz and at temperatures up to 150K. The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of 20ps between 4 and 150K.