Structures of dissociated 1  0 0 dislocations and {1  0 0} stacking faults of alumina (α-Al₂O₃)

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• 作者：E. Tochigi ; N. Shibata ; A. Nakamura ; T. Mizoguchi ; T. Yamamoto ; Y. Ikuhara
• 关键词：Alumina (α ; -Al₂O₃) ; Grain boundary ; Dislocation ; Stacking fault ; Transmission electron microscopy (TEM)
• 刊名：Acta Materialia
• 出版年：2010
• 出版时间：January 2010
• 年：2010
• 卷：58
• 期：1
• 页码：208-215
• 全文大小：816 K

文摘

An alumina (α-Al₂O₃) bicrystal with a {1  0 0}/1 1  0 2° low-angle grain boundary was fabricated by diffusion bonding, and the grain boundary was observed by high-resolution transmission electron microscopy (HRTEM). It was found that 1/31  0 0 partial-dislocation triplets were periodically arrayed along the boundary. The atomic structure within the {1  0 0} stacking faults in between the partial-dislocation triplets was determined by HRTEM combined with first-principles calculations. We discuss the stacking fault structures and their excess energies in detail.