Surface chemistry and transport effects in GaN hydride vapor phase epitaxy
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- 作者：Segal ; A.S. ; Kondratyev ; A.V. ; Karpov ; S.Yu. ; Martin ; D. ; Wagner ; V. ; Ilegems ; M.
- 关键词：81.05.Hd ; 81.10.Aj ; 81.15.Gh ; A1. Computer simulation ; A1. Growth models ; A3. Chloride vapor phase epitaxy ; B1. Gallium compounds
- 刊名：Journal of Crystal Growth
- 出版年：2004
- 出版时间：October 1, 2004
- 年：2004
- 卷：270
- 期：3-4
- 页码：384-395
- 全文大小：482 K
文摘
A simple quasi-thermodynamic model of surface chemistry in GaN hydride vapor phase epitaxy (HVPE) is presented. The model is coupled with the detailed 3D simulations of species transport in a horizontal-tube reactor and validated by the comparison with the data on the GaN growth rate obtained by laser reflectometry. Parametric study of the growth rate as a function of temperature and species flow rates has been performed over a wide range of growth conditions. The important role of species transport in an HVPE reactor is demonstrated. In particular, a strong effect of the natural concentration convection resulting in the formation of recirculation zones and in a non-uniform vapor composition is revealed by modeling. The impact of these effects on the GaN growth rate and V/III ratio on the growth surface is discussed in detail.