High-efficiency top-emitting microcavity LEDs on GaAs and GaAs/Si substrates

详细信息    查看全文

• 作者：Carlin ; J.F. ; Royo ; P. ; Ilegems ; M. ; Gerard ; B. ; Marcadet ; X. ; Nagle ; J.
• 关键词：85.60.Jb ; 81.15.Hi ; 78.60.Fi ; MBE ; Conformal epitaxy ; GaAs on Si ; Microcavities ; Light-emitting diodes
• 刊名：Journal of Crystal Growth
• 出版年：1999
• 出版时间：May, 1999
• 年：1999
• 卷：201-202
• 期：Complete
• 页码：994-998
• 全文大小：138 K

文摘

Microcavity light-emitting diodes (MCLEDs) with top-emitting geometry have been grown by molecular beam epitaxy on GaAs and Si substrates. External quantum efficiencies of up to 10 % were obtained for 420×420 μm² homoepitaxial devices. The efficiency of 32×32 μm² diodes was 4 % for homoepitaxial devices and 1 % for diodes realized on conformal GaAs-on-Si stripes. Much lower efficiencies were obtained for devices grown directly on GaAs-on-Si seed layers, demonstrating that the conformal epitaxy technique leads to an improvement of the GaAs-on-Si materials quality. These results underline the promise of the conformal epitaxy approach for the realization of monolithically integrated light emitters on silicon substrates.