Low-frequency noise in electrically stressed n-MOSFETs
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文摘
Low-frequency noise, electrical current–voltage characteristics and charge pumping methods were employed to study the time-dependent degradation behavior of n-MOSFETs. The increase of 1/f noise under stress correlates, in a non linear manner, with the increase in charge pumping current and the decrease in maximum DC transconductance. The degradation of 1/f noise was found to be an exponential function of the degradation of maximum transconductance, which indicates that the noise can be used as a sensitive monitor for device degradation.