Effect of annealing on the compositional modulation of InAlAsSb

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• 作者：N. Baladé ; s^a ; ^{nuria.balades@uca.es} ; D.L. Sales^a ; M. Herrera^a ; F.J. Delgado^a ; M. Gonzá ; lez^b ; ^c ; K. Clark^d ; P. Pinsunkajana^d ; N. Hoven^e ; S. Hubbard^e ; S. Tomasulo^b ; J.R. Walters^b ; S.I. Molina^a
• 关键词：InAlAsSb ; High-efficiency ; Solar cells ; Multi-junction ; Annealing
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：395
• 期：Complete
• 页码：105-109
• 全文大小：1116 K
• 卷排序：395

文摘

A post-growth annealing under As overpressure over 500 °C for several minutes induces a blue-shift in the InAlAsSb emission. TEM analysis evidences that the small compositional fluctuations of the as-grown samples disappear after being annealed. Annealing stimulates atomic diffusion of the quaternary, homogenizing their constituents and enhancing structural quality.