Investigation of InAs/GaAs1−xSbx quantum dots for applications in intermediate band solar cells
详细信息 查看全文
- 作者：Y. Chenga ; M. Fukudaa ; V.R. Whitesidea ; M.C. Debnatha ; P.J. Vallelya ; T.D. Mishimaa ; M.B. Santosa ; K. Hossainb ; S. Hatchc ; H.Y. Liuc ; I.R. Sellersa ; sellers@ou.edu" class="auth_mail" title="E-mail the corresponding author
- 关键词：Type-II quantum dots ; Intermediate band solar cell ; Defect mediated tunneling
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：147
- 期：Complete
- 页码：94-100
- 全文大小：1954 K
文摘
- •
Uniform, dense InAs quantum dots formed on GaAs1−xSbx matrix materials.
- •
Band alignment transition from type-I to type-II is observed.
- •
External quantum efficiency enhanced in the InAs QDs region with increasing temperature.
- •
Unusual “s-shape” behavior of Jsc as a function of temperature.